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STG50M120F3D7 数据表 (PDF) - STMicroelectronics
STG50M120F3D7 Datasheet PDF - STMicroelectronics
部件名 STG50M120F3D7
下载  STG50M120F3D7 下载
文件大小   243.31 Kbytes
页   10 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

STG50M120F3D7 Datasheet (PDF)

Go To PDF Page 下载 数据表
STG50M120F3D7 Datasheet PDF - STMicroelectronics

部件名 STG50M120F3D7
下载  STG50M120F3D7 Click to download

文件大小   243.31 Kbytes
页   10 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

STG50M120F3D7 数据表 (HTML) - STMicroelectronics


STG50M120F3D7 产品详情

Features
• Maximum junction temperature: TJ = 175 °C
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient

Applications
• Industrial motor control
• Industrial drives
• Solar inverters
• Uninterruptable power supplies (UPS)

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.




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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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