STG35M120F3D7 数据表(PDF) - STMicroelectronics

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STG35M120F3D7 数据表 (PDF) - STMicroelectronics

STG35M120F3D7 Datasheet PDF - STMicroelectronics


部件名	STG35M120F3D7

下载	STG35M120F3D7 下载

文件大小	184.01 Kbytes

页	9 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing

STG35M120F3D7 Datasheet (PDF)

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STG35M120F3D7 Datasheet PDF - STMicroelectronics


部件名	STG35M120F3D7

下载	STG35M120F3D7 Click to download

文件大小	184.01 Kbytes

页	9 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing

STG35M120F3D7 数据表 (HTML) - STMicroelectronics

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STG35M120F3D7 产品详情

Features
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C

Applications
• Motor control
• Industrial drives
• PFC
• UPS
• Solar
• General purpose inverter

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where low-loss and
short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature
coefficient and tight parameter distribution result in safer paralleling operation.

类似零件编号 - STG35M120F3D7

制造商	部件名	数据表	功能描述
STMicroelectronics	STG3155	383Kb / 18P	Low voltage 0.5廓 Max single SPDT switch with break-before-make feature 25-May-2007
	STG3155DTR	383Kb / 18P	Low voltage 0.5廓 Max single SPDT switch with break-before-make feature 25-May-2007
	STG3157	245Kb / 10P	LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE Sep-2002
	STG3157	359Kb / 18P	Low voltage low on-resistance SPDT switch with break-before-make feature 19-Apr-2010
	STG3157CTR	245Kb / 10P	LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE Sep-2002

类似说明 - STG35M120F3D7

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW15M120DF3	1Mb / 19P	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss 31-Oct-2014
	STGW25M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 31-Oct-2014
	STGW40M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 10-Nov-2014
	STG25H120F2D7	252Kb / 10P	1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing May 2015 Rev 1
	STGP15M120F3	429Kb / 15P	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package 01-Aug-2018
	STG200M65F2D8AG	292Kb / 11P	Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing 04-May-2021
	STG15M120F3D8	224Kb / 8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing 18-Jan-2022
	STG15M120F3D7	263Kb / 10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing 16-Aug-2022
	STG50M120F3D7	243Kb / 10P	Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing 17-Aug-2022
	STG60H65FBD7	428Kb / 10P	Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing 06-Jul-2023

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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