STGP15M120F3 数据表(PDF) - STMicroelectronics

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STGP15M120F3 数据表 (PDF) - STMicroelectronics

STGP15M120F3 Datasheet PDF - STMicroelectronics


部件名	STGP15M120F3

下载	STGP15M120F3 下载

文件大小	429.85 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

STGP15M120F3 Datasheet (PDF)

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STGP15M120F3 Datasheet PDF - STMicroelectronics


部件名	STGP15M120F3

下载	STGP15M120F3 Click to download

文件大小	429.85 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

STGP15M120F3 数据表 (HTML) - STMicroelectronics

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STGP15M120F3 产品详情

Features
• 10 μs of minimum short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Maximum junction temperature: TJ = 175 °C

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Applications
• Industrial drives
• UPS
• Solar
• Welding

类似零件编号 - STGP15M120F3

制造商	部件名	数据表	功能描述
STMicroelectronics	STGP15M65DF2	900Kb / 17P	Trench gate field-stop IGBT M series, 650 V, 15 A low loss 13-Nov-2015

类似说明 - STGP15M120F3

制造商	部件名	数据表	功能描述
STMicroelectronics	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low loss 13-Nov-2015
	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss 14-Oct-2015
	STGW15M120DF3	1Mb / 19P	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss 31-Oct-2014
	STGW25M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 31-Oct-2014
	STGW40M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 10-Nov-2014
	STGP8M120DF3	343Kb / 15P	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package 19-Apr-2018
	STGYA50M120DF3	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package 01-Oct-2021
	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package 04-May-2017
	STG15M120F3D8	224Kb / 8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing 18-Jan-2022
	STG15M120F3D7	263Kb / 10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing 16-Aug-2022

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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