Features
• Maximum junction temperature: TJ = 175 °C
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft- and fast-recovery antiparallel diode

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Applications
• Industrial drives
• UPS
• Solar inverters
• General purpose inverter