Features
• Maximum junction temperature: TJ = 175 °C
• 5 μs of short-circuit withstand time
• Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast recovery antiparallel diode

Description
This device is IGBT developed using an advanced proprietary trench gate fieldstop
structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Applications
• UPS
• Solar inverters
• Welding
• PFC