STGYA75H120DF2 数据表(PDF) - STMicroelectronics

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STGYA75H120DF2 数据表 (PDF) - STMicroelectronics

STGYA75H120DF2 Datasheet PDF - STMicroelectronics


部件名	STGYA75H120DF2

下载	STGYA75H120DF2 下载

文件大小	2192.89 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

STGYA75H120DF2 Datasheet (PDF)

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STGYA75H120DF2 Datasheet PDF - STMicroelectronics


部件名	STGYA75H120DF2

下载	STGYA75H120DF2 Click to download

文件大小	2192.89 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

STGYA75H120DF2 数据表 (HTML) - STMicroelectronics

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STGYA75H120DF2 产品详情

Features
• Maximum junction temperature: TJ = 175 °C
• 5 μs of short-circuit withstand time
• VCE(sat) = 2.1 V (typ.) @ IC = 75 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast recovery antiparallel diode

Description
This device is IGBT developed using an advanced proprietary trench gate fieldstop
structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Applications
• UPS
• Solar inverters
• Welding
• PFC

类似零件编号 - STGYA75H120DF2

制造商	部件名	数据表	功能描述
STMicroelectronics	STGYA120M65DF2	958Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 120 A low loss 12-Aug-2016
	STGYA120M65DF2AG	2Mb / 14P	Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package 16-Nov-2022
	STGYA50H120DF2	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package 12-Jan-2022
	STGYA50M120DF3	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package 01-Oct-2021

类似说明 - STGYA75H120DF2

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW15H120DF2	832Kb / 18P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 04-Mar-2015
	STGW15H120F2	801Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 01-Apr-2015
	STGW25H120DF2	737Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 06-Mar-2015
	STGW25H120F2	957Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 23-Mar-2015
	STGW40H120DF2	821Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 28-Jun-2016
	STGW40H120F2	1,002Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 25-Mar-2015
	STGYA50H120DF2	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package 12-Jan-2022
	STGYA50M120DF3	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package 01-Oct-2021
	STGWA75H65DFB2	560Kb / 15P	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package 13-Feb-2020
	STGYA120M65DF2AG	2Mb / 14P	Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package 16-Nov-2022

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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