Features
• AEC-Q101 qualified
• 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V,
TJ (start) = 175 °C
• VCE(sat) = 1.95 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance

Applications
• Auxiliary loads
• Thermal management
• PTC heaters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the MS series IGBTs, which represent an
evolution of low-loss M series specifically designed for inverter system thanks to the
outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly
positive VCE(sat) temperature coefficient and very tight parameter distribution result in
safer paralleling operation.