Features
• 10 μs of short-circuit withstanding time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C

Applications
• Industrial motor control
• Industrial drives
• Solar inverters
• Uninterruptable power supplies (UPS)
• PFC converters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.