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STG25H120F2D7 数据表 (PDF) - STMicroelectronics
STG25H120F2D7 Datasheet PDF - STMicroelectronics
部件名 STG25H120F2D7
下载  STG25H120F2D7 下载
文件大小   252.2 Kbytes
页   10 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

STG25H120F2D7 Datasheet (PDF)

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STG25H120F2D7 Datasheet PDF - STMicroelectronics

部件名 STG25H120F2D7
下载  STG25H120F2D7 Click to download

文件大小   252.2 Kbytes
页   10 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

STG25H120F2D7 数据表 (HTML) - STMicroelectronics


STG25H120F2D7 产品详情

Description
This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs. & ( * 6&

Features
■ 5 µs of short-circuit withstand time
■ Low VCE(sat) = 2.1 V (typ.) at IC = 25 A
■ Tight parameter distribution
■ Low switching-off losses
■ Safer paralleling

Applications
■ Welding
■ UPS
■ Industrial drives
■ Photovoltaic inverter




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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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