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STG200M65F2D8AG 数据表 (PDF) - STMicroelectronics

STG200M65F2D8AG Datasheet PDF - STMicroelectronics
部件名 STG200M65F2D8AG
下载  STG200M65F2D8AG 下载

文件大小   292.01 Kbytes
  11 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

STG200M65F2D8AG Datasheet (PDF)

Go To PDF Page 下载 数据表
STG200M65F2D8AG Datasheet PDF - STMicroelectronics

部件名 STG200M65F2D8AG
下载  STG200M65F2D8AG Click to download

文件大小   292.01 Kbytes
  11 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

STG200M65F2D8AG 数据表 (HTML) - STMicroelectronics

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STG200M65F2D8AG 产品详情

Features
• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C
• 6 μs minimum short-circuit withstanding time at TJ = 150 C

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Applications
• Traction inverter for EV/HEV




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关于 STMicroelectronics


Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车,工业和消费者市场的各种应用提供了广泛的产品,包括微控制器,传感器,功率放大器和集成电路。

Stmicroelectronics成立于1987年,在1​​00多个国家 /地区开展业务,是世界上最大的半导体公司之一。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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