Features
• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.52 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C

Applications
• EV/HEV traction inverters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.