STN7NF10 datasheet(2/8 Pages) STMICROELECTRONICS

部件名	STN7NF10

功能描述	N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET

PDF	8 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

2 / 8 page

STN7NF10

2/8

THERMAL DATA

Note: (*) When mounted on 1 in2 FR-4 BOARD,2 oz Cu, t<10s.

Note: (**) When mounted on minimum footprint.

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-PCB

Thermal Resistance Junction-PCB Max(*)

°C/W

Rthj-PCB

Thermal Resistance Junction-PCB Max(**)

100

°C/W

Maximum Lead Temperature For Soldering Purpose

(1.6 mm from case,for 10s)

260

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 1.5 A

0.055

0.065

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID =1.5 A

Ciss

Input Capacitance

VDS =25V,f= 1MHz, VGS =0

870

Coss

Output Capacitance

125

Crss

Reverse Transfer

Capacitance

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