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STN7NF10 数据表(PDF) 3 Page - STMicroelectronics |
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STN7NF10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STN7NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =50 V,ID =12A RG = 4.7Ω VGS =10 V (see test circuit, Figure 3) 58 ns tr Rise Time 45 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =80 V,ID =24A, VGS =10 V 30 6 10 41 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD =50 V,ID =12 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 49 17 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5 A ISDM (1) Source-drain Current (pulsed) 20 A VSD (2) Forward On Voltage ISD = 5 A, VGS =0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD =30 V,Tj = 150°C (see test circuit, Figure 5) 100 375 7.5 ns nC A |
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