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USBLC6-2P6 数据表(PDF) 5 Page - STMicroelectronics |
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USBLC6-2P6 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() USBLC6-2 Technical information 5/14 We can significantly reduce this phenomena with simple layout optimization. It is for this reason that some recommendations have to be followed (see 2.3: How to ensure good ESD protection). Figure 6. ESD behavior: parasitic phenomena due to unsuitable layout 2.3 How to ensure good ESD protection While the USBLC6-2 provides high immunity to ESD surge, efficient protection depends on the layout of the board. In the same way, with the rail to rail topology, the track from data lines to I/O pins, from VCC to VBUS pin and from GND plane to GND pin must be as short as possible to avoid overvoltages due to parasitic phenomena (see Figure 6. and Figure 7. for layout consideration) VBUS LI/O LVBUS LGND LI/O LGND Vpin CC VCL VF I/O pin VTRANSIL V+ V TRANSIL F -VF VCL- t = 1 ns r t t t = 1 ns r VCL+ GND pin Data line Positive Surge Negative Surge ESD surge on data line di dt LI/O + LGND di dt di dt -LI/O - LGND di dt di dt V + =V +V + L + L surge > 0 CL TRANSIL F I/O GND V = -V - L - L surge > 0 CL- F I/O GND di dt di dt di dt di dt di dt Rd.Ip V V BR TRANSIL + = Figure 7. ESD behavior: layout optimization Figure 8. ESD behavior: measurement conditions Unsuitable layout Optimized layout 11 6 2 5 3 4 11 6 2 5 3 4 +5 V IN OUT TEST BOARD ESD SURGE |
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