ACST4_07 datasheet(6/13 Pages) STMICROELECTRONICS

6 / 13 page

AC line transient voltage ruggedness

ACST4

6/13

Figure 7.

RMS on-state current versus

ambient temperature.

Figure 8.

Relative variation of thermal

impedance versus pulse duration.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

125

Tamb(°C)

α=180°

Printed circuit board FR4

Natural convection

S=0.5cm²

(A)

T(RMS)

0.01

0.10

1.00

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

Zth

(j-a)

Zth

(j-c)

DPAK

IPAK

TO-220FPAB

DPAK

IPAK

TO-220FPAB

K = [Zth/Rth]

Figure 9.

Relative variation of gate trigger

current, holding current and

latching versus junction

temperature (typical values).

Figure 10.

Relative variation of static dV/dt

versus junction temperature.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

40 50

90 100 110 120 130

Tj(°C)

L & IH

, I , I [Tj] / I

, I , I [Tj = 25°C]

100

125

Tj(°C)

out=460V

dV/dt [Tj] / dV/dt [Tj = 125°C]

Figure 11.

Relative variation of critical rate of

decrease of main current versus

reapplied dV/dt (typical values).

Figure 12.

Relative variation of critical rate of

decrease of main current versus

reapplied dV/dt (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

2030

4050

6070

8090

100

(dV/dt)c(V/µs)

out=300V

ACST4-7C

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.0

0.2

0.4

0.6

0.8

1.0

1.2

out=300V

ACST4-7S

(dV/dt)c(V/µs)

ACST4 数据表(PDF) 6 Page - STMicroelectronics

ACST4 数据表(HTML) 6 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载