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ACST4 数据表(PDF) 7 Page - STMicroelectronics |
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ACST4 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 13 page ![]() ACST4 AC line transient voltage ruggedness 7/13 Figure 13. Relative variation of critical rate of decrease of main current versus junction temperature. Figure 14. Surge peak on-state current versus number of cycles. 0 1 2 3 4 5 6 25 50 75 100 125 Tj(°C) V out=300V (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] 0 5 10 15 20 25 30 35 1 10 100 1000 Number of cycles Non repetitive T j initial=25°C Repetitive T C=100°C t=20ms I (A) TSM Figure 15. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I2t. Figure 16. On-state characteristics (maximum values). Figure 17. Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). 1 10 100 1000 0.01 0.10 1.00 10.00 tp(ms) T j initial=25°C dI/dt limitation: 50A/µs I TSM I²t I (A), I²t (A²s) TSM 0.10 1.00 10.00 100.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V (V) TM Tj max. : V to= 0.90 V R d= 100 mΩ T j=25°C T j=125°C I (A) TM 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 S(cm²) DPAK IPAK Rth(j-a)(°C/W) |
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