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DALC208 数据表(PDF) 2 Page - STMicroelectronics |
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DALC208 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 14 page ![]() Characteristics DALC208 2/14 1 Characteristics Figure 2. Input capacitance measurement Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP IEC61000-4-2, air discharge IEC61000-4-2, contact discharge 15 8 kV VRRM Peak reverse voltage per diode 9 V ΔV REF Reference voltage gap between VREF2 and VREF1 9V VIn max. Maximum operating signal input voltage VREF2 V VIn min. Minimum operating signal input voltage VREF1 V IF Continuous forward current (single diode loaded) 200 mA IFRM Repetitive peak forward current (tp = 5 ms, F = 50 kHz) 700 mA IFSM Surge non repetitive forward current - rectangular waveform (See curve on Figure 3.) tp = 2.5 µs tp = 1 µs tp = 100 µs 6 2 1 A Tstg Tj Storage temperature range Maximum junction temperature -55 to + 150 150 °C °C Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-a) Junction to ambient (1) 500 °C/W 1. Device mounted on FR4 PCB with recommended footprint dimensions. Table 3. Electrical characteristics (Tamb = 25 °C) Symbol Parameter Conditions Typ. Max. Unit VF Forward voltage IF = 50 mA 1.2 V IR Reverse leakage current per diode VR = 5 V 1 µA C Input capacitance between Line and GND See Figure 2.7 10 pF G REF1 I/O +V CC REF1 connected to GND REF2 connected to +Vcc Input applied : Vcc = 5 V, Vsign = 30 mV, F = 1 MHz REF2 VR |
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