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ESDALC6V1M3 数据表(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1M3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() 1 Characteristics ESDALC6V1W5 2/7 1 Characteristics 1.1 Electrical Characteristics (Tamb = 25°C) Table 1. Absolute Ratings (Tamb = 25°C) Symbol Parameter Value Unit PPP Peak pulse power (8/20 µs) 25 W Tj Junction temperature 150 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10s 260 °C Top Operating temperature range(1) 1. The values of the operating parameters versus temperature are given through curves and αT parameter. -40 to +150 °C Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current IR Reverse leakage current IF Forward current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic resistance Part Numbers VBR@ IR IRM @ VRM Rd αTC min. max. max. typ.(1) 1. Square pulse lpp = 15 A, tp = 2.5 µs max.(2) 2. VBR = aT* (Tamb - 25 °C) * VBR (25 °C) typ. 3V bias VV mA µA V Ω 10-4/°C pF ESDALC6V1W5 6.1 7.2 1 1 3 1.1 6 7.5 V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
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