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ESDALC6V1M3 数据表(PDF) 2 Page - STMicroelectronics

部件名 ESDALC6V1M3
功能描述  Dual low capacitance Transil array for ESD protection
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESDALC6V1M3 数据表(HTML) 2 Page - STMicroelectronics

  ESDALC6V1M3 Datasheet HTML 1Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 2Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 3Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 4Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 5Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 6Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 7Page - STMicroelectronics  
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1 Characteristics
ESDALC6V1W5
2/7
1
Characteristics
1.1
Electrical Characteristics (Tamb = 25°C)
Table 1.
Absolute Ratings (Tamb = 25°C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power (8/20 µs)
25
W
Tj
Junction temperature
150
°C
Tstg
Storage temperature range
-55 to +150
°C
TL
Maximum lead temperature for soldering during 10s
260
°C
Top
Operating temperature range(1)
1.
The values of the operating parameters versus temperature are given through curves and
αT parameter.
-40 to +150
°C
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
IR
Reverse leakage current
IF
Forward current
αT
Voltage temperature coefficient
VF
Forward voltage drop
C
Capacitance
Rd
Dynamic resistance
Part Numbers
VBR@ IR
IRM @ VRM
Rd
αTC
min.
max.
max.
typ.(1)
1.
Square pulse lpp = 15 A, tp = 2.5 µs
max.(2)
2.
VBR = aT* (Tamb - 25 °C) * VBR (25 °C)
typ.
3V bias
VV
mA
µA
V
10-4/°C
pF
ESDALC6V1W5
6.1
7.2
1
1
3
1.1
6
7.5
V
I
VCLVBR
VRM
IF
VF
IRM
IPP
Slope: 1/Rd



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