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ESDALC6V1M3 数据表(PDF) 3 Page - STMicroelectronics

部件名 ESDALC6V1M3
功能描述  Dual low capacitance Transil array for ESD protection
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESDALC6V1M3 数据表(HTML) 3 Page - STMicroelectronics

  ESDALC6V1M3 Datasheet HTML 1Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 2Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 3Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 4Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 5Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 6Page - STMicroelectronics ESDALC6V1M3 Datasheet HTML 7Page - STMicroelectronics  
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ESDALC6V1W5
1 Characteristics
3/7
Figure 1.
Peak power dissipation versus
initial junction temperature
Figure 2.
Peak pulse power versus
exponential pulse duration
(Tj initial = 25°C)
Figure 3.
Clamping voltage versus peak pulse
current (Tj initial = 25°C, rectangular
waveform, tp = 2.5 µs)
Figure 4.
Capacitance versus reverse applied
voltage (typical values)
Figure 5.
Relative variation of leakage current
versus junction temperature
(typical values)
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
175
Tj(°C)
Ppp[Tj initial] / Ppp [Tj initial = 25°C]
10
100
1
10
100
tp(µs)
Tj initial = 25°C
Ppp(W)
0.1
1.0
10.0
100.0
0
1020
3040
5060
Vcl(V)
tp=2.5µs
Tj initial =25°C
Ipp(A)
C(pF)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F=1MHz
Vosc=30mV
RMS
Tj=25°C
VR(V)
IR [Tj] / IR [Tj=25°C]
1
10
100
25
50
75
100
125
150
Tj(°C)
1.E-03
1.E-02
1.E-01
1.E+00
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IFM (A)
V(V)
FM



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