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L9380 数据表(PDF) 10 Page - STMicroelectronics

部件名 L9380
功能描述  Triple high-side MOSFET driver
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L9380 数据表(HTML) 10 Page - STMicroelectronics

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Functional description
L9380
10/18
In application which don’t use the overload protection or if one channel is not used, the
Timer pin of this channel must be connected to ground and the drain pin with a resistor to
Vbat.
The timing characteristic illustrates the function and the meaning of VDSmin and Toff (see
Figure 6). The input current of the overload sense comparator is specified as ISmax. The sum
IPR + IDmax generates a drop across the external resistor RD if the drain pin voltage is higher
than the source pin (see Figure 4). In the switching point the comparator input source pin
currents are equal and the half of the specified current ISmax. For an offset compensation
equal external resistors (RD = RS) at drain and source pin are imperative. The drain sense
comparator, which detects the overload, has a symmetrical hysteresis of 20 mV (see
Figure 5).
Exceeding the source pin voltage by 10 mV with respect to the drain voltage forces the timer
capacitor to discharge. Decreasing the source pin voltage 10 mV lower than the drain pin
voltage an overload of the external MOS is detected and the timer capacitor will be loaded.
After reaching a voltage at pin CT higher than the timer threshold VThi the influenced
channel is switched off. In this case the overload is stored in the timer capacitor.
The timer capacitor will be discharged with a ’High’ signal at the input (see Figure 3). After
reaching the lower timer threshold VTLo the overload protection is reset and the channel is
able to switch on again.
Figure 3.
Timing characteristic
Figure 4.
Drain, source input current.
VIN
VG
VS
VT
4.4V
0.4V
VDSmin
td
td
Toff
D98AT392
ID
IPR + IDmax
ISmax
IS
V S
=
V
D
IPR
0
D98AT393



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