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LIS2L02AQ 数据表(PDF) 4 Page - STMicroelectronics |
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LIS2L02AQ 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() LIS2L02AQ 4/9 Notes: 1. Typical specifications are not guaranteed 2. Offset and sensitivity are essentially ratiometric to supply voltage 3. Guaranteed by wafer level test and measurement of initial offset and sensitivity 4. Guaranteed by design through measurements done up to 1g 5. Contribution to the measuring output of the inclination/acceleration along the perpendicular axis 6. Guaranteed by design 7. Self test “output voltage delta change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0) 8. Self test “output voltage delta change” varies cubically with supply voltage 9. When full-scale is set to 6g, self-test “output delta change” is one third of the specified value 10.Bandwidth=1/(2* π*110KΩ*Cload) ABSOLUTE MAXIMUM RATING Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 3. Absolute Maximum Rating Cload Capacitive load drive10 320 pF Ton Turn-On Time at exit from Power Down mode Cload in µF 550*Cload +0.3 ms Symbol Ratings Maximum Value Unit Vdd Supply voltage -0.3 to 7 V Vin Input voltage on any control pin (FS, PD, ST) -0.3 to Vdd +0.3 V APOW Acceleration (Any axis, Powered, Vdd=3.3V) 3000g for 0.5 ms 10000g for 0.1 ms AUNP Acceleration (Any axis, Unpowered) 3000g for 0.5 ms 10000g for 0.1 ms TOP Operating Temperature Range -40 to +85 °C TSTG Storage Temperature Range -40 to +105 °C ESD Electrostatic discharge protection 2KV HBM Table 2. Electrical Characteristics (continued) (Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ.1 Max. Unit |
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