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L6732 数据表(PDF) 17 Page - STMicroelectronics |
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L6732 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 37 page ![]() L6732 Device description 17/37 rises with a slope of 100 mV/µs, emulating in this way the breaking of the high-side MOSFET as an over-voltage cause. The device realizes the over-current-protection (OCP) sensing the current both on the high-side MOSFET(s) and the low-side MOSFET(s) and so 2 current limit thresholds can be set (see OCH pin and OCL pin in Table 4. Pins function): ● Peak current limit ● Valley current limit The peak current protection is active when the high-side MOSFET(s) is turned on, after a masking time of about 100 ns. The valley-current-protection is enabled when the low-side MOSFET(s) is turned on after a masking time of about 400 ns. If, when the soft-start phase is completed, an over current event occurs during the on time (peak-current-protection) or during the off time (valley-current-protection) the device enters in HICCUP mode: the high- side and low-side MOSFET(s) are turned off, the soft-start capacitor is discharged with a constant current of 10 µA and when the voltage at the SS pin reaches 0.5 V the soft-start phase restarts. During the soft-start phase the OCP provides a constant-current-protection. If during the TON the OCH comparator triggers an over current the high-side MOSFET(s) is immediately turned off (after the masking time and the internal delay) and returned on at the next PWM cycle. The limit of this protection is that the TON can't be less than masking time plus propagation delay because during the masking time the peak-current-protection is disabled. In case of very hard short circuit, even with this short TON, the current could escalate. The valley-current-protection is very helpful in this case to limit the current. If during the off-time the OCL comparator triggers an over current, the high-side MOSFET(s) is not turned on until the current is over the valley-current-limit. This implies that, if it is necessary, some pulses of the high-side MOSFET(s) will be skipped, guaranteeing a maximum current due to the following formula: Figure 11. OVP: the low-side MOSFET is turned-on in advance VOUT VFB LGate 109% |
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