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M48T35_0708 数据表(PDF) 15 Page - STMicroelectronics

部件名 M48T35_0708
功能描述  5V, 256 Kbit (32 Kb x 8) TIMEKEEPER SRAM
PDF  29 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48T35_0708 数据表(HTML) 15 Page - STMicroelectronics

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M48T35 M48T35Y
Clock operations
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Figure 8.
Crystal accuracy across temperature
Figure 9.
Clock calibration
3.6
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1µF (as shown in Figure 10
on page 16) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode
AI02124
-80
-60
-100
-40
-20
0
20
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
ΔF
= -0.038
(T - T
0)
2 ± 10%
F
ppm
C
2
T
0 = 25 °C
ppm
°C
AI00594B
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION



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