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STP22NM50FP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP22NM50FP
功能描述  N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP22NM50FP 数据表(HTML) 2 Page - STMicroelectronics

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STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
TO-220/I2PAK/
D2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
0.65
2.8
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = 5 A, VDD =50 V)
650
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 10A
0.16
0.215
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 10A
10
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
1480
pF
Coss
Output Capacitance
285
pF
Crss
Reverse Transfer
Capacitance
34
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
130
pF
Rg
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω



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