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STP22NM50FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP22NM50FP
功能描述  N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP22NM50FP 数据表(HTML) 3 Page - STMicroelectronics

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STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =250 V, ID =10 A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
24
ns
tr
Rise Time
16
ns
Qg
Total Gate Charge
VDD =400 V, ID =20 A,
VGS =10 V
40
56
nC
Qgs
Gate-Source Charge
13
nC
Qgd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400 V, ID =20A,
RG =4.7Ω, VGS =10 V
(see test circuit, Figure 5)
9ns
tf
Fall Time
8.5
ns
tc
Cross-over Time
23
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
Forward On Voltage
ISD =20A,VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD =100 V, Tj =25°C
(see test circuit, Figure 5)
350
4.6
26
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD =100 V, Tj =150°C
(see test circuit, Figure 5)
435
5.9
27
ns
µC
A



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