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STP22NS25Z 数据表(PDF) 1 Page - STMicroelectronics |
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STP22NS25Z 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() 1/10 January 2002 STP22NS25Z STB22NS25Z N-CHANNEL 250V - 0.13 Ω - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET (1) ISD ≤22A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM s TYPICAL RDS(on) = 0.13 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP22NS25Z STB22NS25Z 250 V 250 V < 0.15 Ω < 0.15 Ω 22 A 22 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 250 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 22 A ID Drain Current (continuos) at TC = 100°C 13.9 A IDM (l) Drain Current (pulsed) 88 A PTOT Total Dissipation at TC = 25°C 135 W Derating Factor 1.07 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 2500 V dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns Tstg Storage Temperature –55 to 150 °C Tj Max. Operating Junction Temperature TO-220 1 2 3 1 3 D2PAK |
类似零件编号 - STP22NS25Z |
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类似说明 - STP22NS25Z |
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