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STP22NS25Z / STB22NS25Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-

effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage

of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

(see test circuit, Figure 3)

20

ns

Rise Time

30

ns

Total Gate Charge

108

151

nC

Gate-Source Charge

11

nC

Gate-Drain Charge

40

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-off- Delay Time

Fall Time

(see test circuit, Figure 3)

100

78

ns

ns

Off-voltage Rise Time

Fall Time

Cross-over Time

(see test circuit, Figure 5)

37

65

110

ns

ns

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

22

A

Source-drain Current (pulsed)

88

A

Forward On Voltage

1.6

V

Reverse Recovery Time

(see test circuit, Figure 5)

292

ns

Reverse Recovery Charge

3065

nC

Reverse Recovery Current

21

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 500

µA (Open Drain)

20

V