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ECP2 数据表(PDF) 59 Page - Lattice Semiconductor |
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ECP2 数据表(HTML) 59 Page - Lattice Semiconductor |
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59 / 386 page ![]() 3-7 DC and Switching Characteristics Lattice Semiconductor LatticeECP2/M Family Data Sheet LatticeECP2M Initialization Supply Current 1, 2, 3, 4 Over Recommended Operating Conditions Symbol Parameter Device Typ. 5, 6 Units ICC Core Power Supply Current ECP2M20 41 mA ECP2M35 107 mA ECP2M50 169 mA ECP2M70 254 mA ECP2M100 378 mA ICCAUX Auxiliary Power Supply Current ECP2M20 30 mA ECP2M35 30 mA ECP2M50 30 mA ECP2M70 30 mA ECP2M100 30 mA ICCGPLL GPLL Power Supply Current (per GPLL) All Devices 0.5 mA ICCSPLL SPLL Power Supply Current (per SPLL) All Devices 0.5 mA ICCIO Bank Power Supply Current (per Bank) All Devices 3 mA ICCJ VCCJ Power Supply Current All Devices 4 mA 1. Until DONE signal is active. 2. For further information about supply current, please see the list of additional technical documentation at the end of this data sheet. 3. Assumes all outputs are tristated, all inputs are configured as LVCMOS and held at the VCCIO or GND. 4. Frequency 0MHz. 5. TJ = 25 oC, power supplies at nominal voltage. 6. A specific configuration pattern is used that scales with the size of the device; consists of 75% PFU utilization, 50% EBR, and 25% I/O con- figuration. |
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