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PM6675STR 数据表(PDF) 46 Page - STMicroelectronics

部件名 PM6675STR
功能描述  High efficiency step-down controller with embedded 2 A LDO regulator
PDF  53 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PM6675STR 数据表(HTML) 46 Page - STMicroelectronics

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Application information
PM6675S
46/53
8.1.6
VOUT current limit setting
The valley current limit is set by RCSNS and must be chosen to support the maximum load
current. The valley of the inductor current ILvalley is:
Equation 46
The output current limit depends on the current ripple as shown in Figure 48:
Figure 48.
Valley current limit waveforms
As the valley threshold is fixed, the greater the current ripple, the greater the DC output
current will be. If an output current limit greater than ILOAD(max) over all the input voltage
range is required, the minimum current ripple must be considered in the previous formula.
Then the resistor RCSNS is:
Equation 47
where RDSon is the drain-source on-resistance of the low-side switch. Consider the
temperature effect and the worst case value in RDSon calculation (typically +0.4 % / °C).
The accuracy of the valley current also depends on the offset of the internal comparator (±5
mV).
The negative valley-current limit (if the device works in forced-PWM mode) is given by:
Equation 48
2
I
(max)
I
I
L
LOAD
Lvalley
=
Inductor current
Valley current limit
MAX LOAD 1
MAX LOAD 2
Inductor current
Current
Time
uA
100
I
R
R
Lvalley
DSon
CSNS
=
DSon
NEG
R
mV
110
I
=



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