SMP80MC datasheet(3/10 Pages) STMICROELECTRONICS

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SMP80MC

Characteristics

3/10

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (with recommended footprint)

100

° C/W

Rth(j-l)

Junction to leads

° C/W

Table 4.

Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IRM

Leakage current

IPP

Peak pulse current

IBO

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Types

IRM @ VRM

IR @ VR

(1)

IR measured at VR guarantee VBR min ≥ VR

Dynamic

VBO

(2)

See Figure 9 functional test circuit 1

Static

VBO @ IBO

(3)

See Figure 10 test circuit 2

(4)

See Figure 11 functional holding current test circuit 3

C(5)

VR = 50 V bias, VRMS = 1 V, F= 1 MHz

C(6)

VR = 2 V bias, VRMS = 1 V, F = 1 MHz

max.

min.

typ.

µA

SMP80MC-120

108

120

155

800

150

SMP80MC-140

126

140

180

SMP80MC-160

144

160

205

SMP80MC-200

180

200

255

SMP80MC-230

207

230

295

SMP80MC-270

243

270

345

SMP80MC-320

290

320

400

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