SMP80MC

Characteristics

5/10

Figure 9.

Test circuit 1 for dynamic IBO and VBO parameters

Figure 7.

Variation of thermal impedance

junction to ambient versus pulse

duration (Printed circuit board FR4,

SCu=35µm, recommended pad

layout)

Figure 8.

Relative variation of junction

capacitance versus reverse voltage

applied (typical values)

Z/R

th(j-a)

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

C [V ] / C [V =2V]

RR

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1

10

100

1000

V (V)

R

F =1MHz

V

= 1V

Tj = 25°C

OSC

RMS

100 V / µs, di /dt < 10 A / µs, Ipp = 80 A

1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A

U

U

10 µF

2

Ω

45

Ω

66

Ω

470

Ω

83

Ω

0.36 nF

46 µH

60 µF

26 µH

12

Ω

250

Ω

46 µH

47

Ω

KeyTek 'System 2' generator with PN246I module

KeyTek 'System 2' generator with PN246I module