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ADG852BCPZ-R21 数据表(PDF) 3 Page - Analog Devices

部件名 ADG852BCPZ-R21
功能描述  0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADG852BCPZ-R21 数据表(HTML) 3 Page - Analog Devices

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ADG852
Rev. 0 | Page 3 of 16
SPECIFICATIONS
VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
+25°C
−40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance, RON
0.8
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA; see Figure 16
0.85
1
Ω max
On Resistance Match Between Channels, ∆RON
0.02
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA
0.04
Ω max
On Resistance Flatness, RFLAT (ON)
0.17
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA
0.23
Ω max
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±10
pA typ
VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V; see Figure 17
Channel On Leakage, ID, IS (On)
±30
pA typ
VS = VD = 0.6 V or 4.2 V; see Figure 18
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.002
μA typ
VIN = VGND or VDD
0.05
μA max
CIN, Digital Input Capacitance
2.5
pF typ
DYNAMIC CHARACTERISTICS1
tON
17
ns typ
RL = 50 Ω, CL = 35 pF
23
28
ns max
VS = 3 V/0 V; see Figure 19
tOFF
6
ns typ
RL = 50 Ω, CL = 35 pF
8.5
9.2
ns max
VS = 3 V; see Figure 19
Break-Before-Make Time Delay, tBBM
14
ns typ
RL = 50 Ω, CL = 35 pF
8
ns min
VS1 = VS2 = 1.5 V; see Figure 20
Charge Injection
30
pC typ
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 21
Off Isolation
−75
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22
Channel-to-Channel Crosstalk
−73
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 24
Total Harmonic Distortion, THD + N
0.08
%
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3.5 V p-p
Insertion Loss
−0.6
dB typ
RL = 50 Ω, CL = 5 pF; see Figure 23
−3 dB Bandwidth
100
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 23
CS (Off )
19.5
pF typ
CD, CS (On)
50
pF typ
POWER REQUIREMENTS
VDD = 5.5 V
IDD
0.002
μA typ
Digital inputs = 0 V or 5.5 V
1.0
μA max
1 Guaranteed by design, not subject to production test.



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