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ADG852BCPZ-R21 数据表(PDF) 4 Page - Analog Devices |
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ADG852BCPZ-R21 数据表(HTML) 4 Page - Analog Devices |
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4 / 16 page ![]() ADG852 Rev. 0 | Page 4 of 16 VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. Table 2. Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 1.3 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IDS = 100 mA; see Figure 16 1.5 1.7 Ω max On Resistance Match Between Channels, ∆RON 0.03 Ω typ VDD = 2.7 V, VS = 0.6 V, IDS = 100 mA 0.05 Ω max On Resistance Flatness, RFLAT (ON) 0.48 Ω typ VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA 0.66 Ω max LEAKAGE CURRENTS VDD = 3.6 V Source Off Leakage, IS (Off ) ±10 pA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; see Figure 17 Channel On Leakage, ID, IS (On) ±30 pA typ VS = VD = 0.6 V or 3.3 V; see Figure 18 DIGITAL INPUTS Input High Voltage, VINH 1.35 V min Input Low Voltage, VINL 0.7 V max Input Current IINL or IINH 0.002 μA typ VIN = VGND or VDD 0.05 μA max CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS1 tON 25 ns typ RL = 50 Ω, CL = 35 pF 37 43 ns max VS = 1.5 V/0 V; see Figure 19 tOFF 7 ns typ RL = 50 Ω, CL = 35 pF 7.4 8 ns max VS = 1.5 V; see Figure 19 Break-Before-Make Time Delay, tBBM 22 ns typ RL = 50 Ω, CL = 35 pF 13 ns min VS1 = VS2 = 1 V; see Figure 20 Charge Injection 23 pC typ VS = 1.5 V, RS = 0 V, CL = 1 nF; see Figure 21 Off Isolation −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22 Channel-to-Channel Crosstalk −73 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 24 Total Harmonic Distortion, THD 0.15 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p Insertion Loss −0.07 dB typ RL = 50 Ω, CL = 5 pF; see Figure 23 –3 dB Bandwidth 100 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 23 CS (Off ) 20 pF typ CD, CS (On) 52 pF typ POWER REQUIREMENTS VDD = 3.6 V IDD 0.002 μA typ Digital inputs = 0 V or 3.6 V 1.0 μA max 1 Guaranteed by design, not subject to production test. |
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