STP45NF06L datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP45NF06L

功能描述	N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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September 2002

STP45NF06L

STB45NF06L

N-CHANNEL 60V - 0.022

Ω -38A TO-220 / D2PAK

STripFET™ II POWER MOSFET

(1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 0.022Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

LOGIC LEVEL GATE DRIVE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

“Single

Feature

Size

™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP45NF06L

STB45NF06L

60 V

< 0.028

Ω

< 0.028

Ω

38 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

60

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

60

V

VGS

Gate- source Voltage

±16

V

ID

Drain Current (continuos) at TC = 25°C

38

A

ID

Drain Current (continuos) at TC = 100°C

26

A

IDM ( )

Drain Current (pulsed)

152

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.53

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

–55 to 175

°C

Tj

Max. Operating Junction Temperature

D2PAK

1

3

1

2

3

TO-220

INTERNAL SCHEMATIC DIAGRAM

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类似说明 - STP45NF06L

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