数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STP45NF06L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP45NF06L
功能描述  N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP45NF06L 数据表(HTML) 2 Page - STMicroelectronics

  STP45NF06L Datasheet HTML 1Page - STMicroelectronics STP45NF06L Datasheet HTML 2Page - STMicroelectronics STP45NF06L Datasheet HTML 3Page - STMicroelectronics STP45NF06L Datasheet HTML 4Page - STMicroelectronics STP45NF06L Datasheet HTML 5Page - STMicroelectronics STP45NF06L Datasheet HTML 6Page - STMicroelectronics STP45NF06L Datasheet HTML 7Page - STMicroelectronics STP45NF06L Datasheet HTML 8Page - STMicroelectronics STP45NF06L Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
STP45NF06L - STB45NF06L
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.87
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
38
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
135
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±16V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =5V, ID =19 A
0.024
0.03
Ω
VGS =10V, ID =19A
0.022
0.028
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V , ID=19 A
24
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
1600
pF
Coss
Output Capacitance
217
pF
Crss
Reverse Transfer
Capacitance
62
pF



Html Pages

1 2 3 4 5 6 7 8 9 10


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com