STP4NC60AFP datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP4NC60AFP

功能描述	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 10 page

1/10

July 2001

STP4NC60A - STP4NC60AFP

STB4NC60A-1

N-CHANNEL 600V - 1.8

Ω - 4.2A TO-220/TO-220FP/I2PAK

PowerMesh™II MOSFET

(*)Limited only by maximum Temperature allowed

s

TYPICAL RDS(on) = 1.8Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVERS

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TYPE

VDSS

RDS(on)

ID

STP4NC60A

STP4NC60AFP

STB4NC60A-1

600V

< 2

Ω

< 2

Ω

< 2

Ω

4.2A

Symbol

Parameter

Value

Unit

STP(B)4NC60A(-1)

STP4NC60AFP

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

4.2

4.2(*)

A

ID

Drain Current (continuos) at TC = 100°C

2.6

2.6(*)

A

IDM (q)

Drain Current (pulsed)

16.8

16.8(*)

A

PTOT

Total Dissipation at TC = 25°C

100

35

W

Derating Factor

0.8

0.28

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

–60 to 150

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

TO-220

1

2

3

TO-220FP

1

2

3

(Tabless TO-220)

类似零件编号 - STP4NC60AFP

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP4NC60AFP	319Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP4NC60AFP

制造商	部件名	数据表	功能描述
STMicroelectronics	STB4NC60	429Kb / 9P	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh™ I MOSFET Oct-2001
	STB5NB60	93Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
	STP19NB20	546Kb / 12P	N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET Aug-2002
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NC60	356Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET Apr-2003
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP6NC60	364Kb / 10P	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH™ II MOSFET May-2001
	STP8NC50	352Kb / 10P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET Dec-2000
	STGB6NC60HD	424Kb / 18P	N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH™IGBT 26-Apr-2007