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STP4NC60AFP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP4NC60AFP
功能描述  N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP4NC60AFP 数据表(HTML) 3 Page - STMicroelectronics

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STP4NC60A/FP/STB4NC60A-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300V, ID = 2A
RG = 4.7Ω ,VGS = 10V
(see test circuit, Figure 3)
14
ns
tr
Rise Time
14
ns
Qg
Total Gate Charge
VDD = 480V, ID = 4A,
VGS = 10V
16.5
21.1
nC
Qgs
Gate-Source Charge
2.5
nC
Qgd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 4A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
15
ns
tf
Fall Time
19
ns
tc
Cross-over Time
24
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
4.2
A
ISDM (2)
Source-drain Current (pulsed)
16.8
A
VSD (1)
Forward On Voltage
ISD = 4.2A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 4A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
600
ns
Qrr
Reverse Recovery Charge
2.7
µC
IRRM
Reverse Recovery Current
9
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220/I2PAK



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