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December 2002

STP4NC80Z - STP4NC80ZFP

STB4NC80Z - STB4NC80Z-1

N-CHANNEL 800V - 2.4

Zener-Protected PowerMESH™III MOSFET

TO-220

1

2

3

TO-220FP

1

2

3

(Tabless TO-220)

1

3

s

s

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STP4NC80Z/FP

800V

< 2.8

Ω

4A

STB4NC80Z/-1

800V

< 2.8

Ω

4A

Symbol

Parameter

Value

Unit

STP(B)4NC80Z(-1)

STP4NC80ZFP

800

V

800

V

Gate- source Voltage

± 25

V

4

4(*)

A

2.5

2.5(*)

A

Drain Current (pulsed)

16

16(*)

A

100

35

W

Derating Factor

0.8

0.28

W/°C

Gate-source Current

±50

mA

Gate source ESD(HBM-C=100pF, R=15K

Ω)

2.5

KV

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

Insulation Winthstand Voltage (DC)

--

2000

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C