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STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3.

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally

be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient

and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid

the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

(see test circuit, Figure 3)

27

ns

Rise Time

10

ns

Total Gate Charge

27

36.5

nC

Gate-Source Charge

7

nC

Gate-Drain Charge

10

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off-voltage Rise Time

(see test circuit, Figure 5)

11

ns

Fall Time

10

ns

Cross-over Time

24

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

4

A

Source-drain Current (pulsed)

16

A

Forward On Voltage

1.6

V

Reverse Recovery Time

(see test circuit, Figure 5)

560

ns

Reverse Recovery Charge

3.4

µC

Reverse Recovery Current

13

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

25

V

αT

Voltage Thermal Coefficient

T=25°C Note(3)

1.3

Rz

Dynamic Resistance

90

Ω