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November 2003

STP4NC80Z - STP4NC80ZFP

STB4NC80Z - STB4NC80Z-1

N-CHANNEL 800V - 2.4

Zener-Protected PowerMESH™III MOSFET

TO-220

1

2

3

TO-220FP

1

2

3

(Tabless TO-220)

1

3

s

s

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrat-

ing back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capa-

bility with higher ruggedness performance as re-

quested

by a

large

variety

of single-switch

applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ORDERING INFORMATION

TYPE

STP4NC80Z/FP

800V

< 2.8

Ω

4A

STB4NC80Z/-1

800V

< 2.8

Ω

4A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP4NC80Z

P4NC80Z

TO-220

TUBE

STP4NC80ZFP

P4NC80ZFP

TO-220FP

TUBE

STB4NC80ZT4

B4NC80Z

TAPE & REEL

STB4NC80Z-1

B4NC80Z

TAPE & REEL