STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

2/14

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Value

Unit

STP(B)4NC80Z(-1)

STP4NC80ZFP

800

V

800

V

Gate- source Voltage

± 25

V

4

4(*)

A

2.5

2.5(*)

A

Drain Current (pulsed)

16

16(*)

A

100

35

W

Derating Factor

0.8

0.28

W/°C

Gate-source Current

±50

mA

Gate source ESD(HBM-C=100pF, R=15K

Ω)

2.5

KV

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

Insulation Winthstand Voltage (DC)

--

2000

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

1.25

3.57

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

30

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

4A

Single Pulse Avalanche Energy

225

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source

Breakdown Voltage

800

V

Coefficient

0.9

V/°C

Zero Gate Voltage

1µA

50

µA

Gate-body Leakage

±10

µA