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STP53N08 数据表(PDF) 1 Page - STMicroelectronics

部件名 STP53N08
功能描述  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP53N08 数据表(HTML) 1 Page - STMicroelectronics

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STP53N08
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.018
Ω
s
AVALANCE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
RDS(on)
ID
STP53N08
80 V
< 0.024
Ω
53 A
March 1996
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
80
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)80
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
oC53
A
ID
Drain Current (continuous) at Tc = 100
o C37
A
IDM(
•)
Drain Current (pulsed)
212
A
Ptot
Total Dissipation at Tc = 25
o C
150
W
Derating Factor
1
W/
oC
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
TO-220
1/5


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