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STP53N08 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP53N08
功能描述  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP53N08 数据表(HTML) 2 Page - STMicroelectronics

  STP53N08 Datasheet HTML 1Page - STMicroelectronics STP53N08 Datasheet HTML 2Page - STMicroelectronics STP53N08 Datasheet HTML 3Page - STMicroelectronics STP53N08 Datasheet HTML 4Page - STMicroelectronics STP53N08 Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
53
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
600
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ < 1%)
150
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100
oC, pulse width limited by Tj max, δ < 1%)
37
A
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
80
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
o C
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
±100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 26.5 A
VGS = 10 V
ID = 26.5 A Tc = 100
oC
0.018
0.024
0.048
Ω
Ω
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
53
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 26.5 A
20
38
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
4200
700
160
5500
900
210
pF
pF
pF
STP53N08
2/5



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