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May 2003

STP7NC80Z - STP7NC80ZFP

STB7NC80Z - STB7NC80Z-1

N-CHANNEL 800V - 1.3

Zener-Protected PowerMESH™III MOSFET

s

s

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE TO - SOURCE ZENER DIODES

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100% AVALANCHE TESTED

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VERY LOW GATE INPUT RESISTANCE

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GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

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SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

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WELDING EQUIPMENT

ORDERING INFORMATION

TYPE

STP7NC80Z

STP7NC80ZFP

STB7NC80Z

STB7NC80Z-1

800 V

800 V

800 V

800 V

< 1.5

Ω

< 1.5

Ω

< 1.5

Ω

< 1.5

Ω

6.5 A

6.5 A

6.5 A

6.5 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP7NC80Z

P7NC80Z

TO-220

TUBE

STP7NC80ZFP

P7NC80ZFP

TO-220FP

TUBE

STB7NC80ZT4

B7NC80Z

TAPE&REEL

STB7NC80Z-1

B7NC80Z

TUBE

TO-220

TO-220FP

1

2

3

(Tabless TO-220)

1

2

3

1

3

INTERNAL SCHEMATIC DIAGRAM