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STP7NC80Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP7NC80Z
功能描述  N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP7NC80Z 数据表(HTML) 3 Page - STMicroelectronics

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
∆VBV=αT(25°-T) BVGSO(25°)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
800
V
∆BVDSS/∆TJ Breakdown Voltage Temp.
Coefficient
ID =1mA, VGS = 0
0.9
V/°C
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
345
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 3.3 A
1.3
1.5
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 3.3 A
6S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
2350
164
17
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =400 V, ID =3 A
RG = 4.7Ω VGS =10 V
( see test circuit, Figure 3)
33
12
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =640 V, ID =6 A,
VGS =10V
43
12
15
58
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V, ID =6 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
13
13
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
6.5
26
A
A
VSD (1)
Forward On Voltage
ISD =6.1 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A, di/dt = 100A/µs
VDD =40V, Tj = 150°C
(see test circuit, Figure 5)
680
6
18
ns
µC
A



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