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STP9NB50 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP9NB50
功能描述  N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP9NB50 数据表(HTML) 2 Page - STMicroelectronics

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STP9NB50/FP
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25
°C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1
3.13
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
8.6
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25 °C, ID =IAR,VDD =50 V)
520
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS =0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
3
45V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 4.3 A
0.75
0.85
Ω
ID(on)
On State Drain Current
VDS >ID(on) xRDS(on)max,
VGS =10V
8.6
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 4.3 A
5.7
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS =0
1250
pF
Coss
Output Capacitance
175
pF
Crss
Reverse Transfer
Capacitance
20
pF



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