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STP9NB50 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP9NB50
功能描述  N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP9NB50 数据表(HTML) 3 Page - STMicroelectronics

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STP9NB50/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 4.3 A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
19
ns
tr
11
ns
Qg
Total Gate Charge
VDD = 400V, ID = 8.6 A,
VGS = 10V
32
45
nC
Qgs
Gate-Source Charge
10.6
nC
Qgd
Gate-Drain Charge
13.7
nC
Symbol
Parameter
Test Condit ions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 8.6 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
11.5
ns
tf
Fall Time
11
ns
tc
Cross-over Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
8.6
A
ISDM (2)
Source-drain Current (pulsed)
34.4
A
VSD (1)
Forward On Voltage
ISD = 8.6 A, VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 8.6 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
420
ns
Qrr
Reverse Recovery Charge
3.5
µC
IRRM
Reverse Recovery Current
16.5
A
Safe Operating Area
Safe Operating Area for TO-220FP



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