STP9NC65FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP9NC65FP

功能描述	N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMesh™II MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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February 2001

STP9NC65

STP9NC65FP

N-CHANNEL 650V - 0.75

Ω - 8A TO-220/TO-220FP

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 0.75 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

STP9NC65

650 V

< 0.90

Ω

8 A

STP9NC65FP

650 V

< 0.90

Ω

8 A

Symbol

Parameter

Value

Unit

STP9NC65

STP9NC65FP

VDS

Drain-source Voltage (VGS = 0)

650

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

650

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

8

8(*)

A

ID

Drain Current (continuos) at TC = 100°C

5

5(*)

A

IDM (q)

Drain Current (pulsed)

32

32(*)

A

PTOT

Total Dissipation at TC = 25°C

140

40

W

Derating Factor

1.12

0.32

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

INTERNAL SCHEMATIC DIAGRAM

TO-220

TO-220FP

1

2

3

(Available Upon Request)

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