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STP9NC65FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP9NC65FP
功能描述  N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMesh™II MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP9NC65FP 数据表(HTML) 3 Page - STMicroelectronics

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STP9NC65/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 325 V, ID = 4.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
28
ns
tr
Rise Time
15
ns
Qg
Total Gate Charge
VDD = 520V, ID = 9 A,
VGS = 10V
44
62
nC
Qgs
Gate-Source Charge
10.5
nC
Qgd
Gate-Drain Charge
19.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-Off Delay Time
VDD = 325V, ID = 4.5 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
53
ns
tf
Fall Time
30
ns
tr(Voff)
Off-voltage Rise Time
VDD = 520V, ID = 9 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
15
ns
tf
Fall Time
12
ns
tc
Cross-over Time
24
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
8
A
ISDM (2)
Source-drain Current (pulsed)
32
A
VSD (1)
Forward On Voltage
ISD = 8 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 9 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
610
ns
Qrr
Reverse Recovery Charge
5.14
µC
IRRM
Reverse Recovery Current
17
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP



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