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STPS10L40CT 数据表(PDF) 2 Page - STMicroelectronics |
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STPS10L40CT 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR =VRRM 0.2 mA Tj = 100 °C 825 mA VF * Forward voltage drop Tj = 25 °CIF =5 A 0.53 V Tj = 125 °CIF =5 A 0.36 0.46 Tj = 25 °CIF =10 A 0.67 Tj = 125 °CIF =10 A 0.49 0.59 Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P = 0.33 x IF(AV) + 0.026 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB D 2PAK Per diode Total 3 1.7 °C/W Rth (c) Coupling 0.35 Rth (j-c) Junction to case ISOWATT220AB Per diode Total 5 3.8 °C/W Rth (c) Coupling 2.5 THERMAL RESISTANCES When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IF(av) (A) PF(av)(W) δ = 0.2 δ = 0.5 δ =1 δ = 0.05 δ = 0.1 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 IF(av)(A) Rth(j-a)=15 °C/W Rth(j-a)=Rth(j-c) Tamb( °C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=0.5, per diode). STPS10L40CT/CG/CF 2/6 |
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